NGB8206AN Overview
NGB8206N, NGB8206AN Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT).
NGB8206AN Applications
- Ideal for Coil−on−Plug and Driver−on−Coil Applications
- Gate−Emitter ESD Protection
NGB8206AN datasheet by onsemi.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | NGB8206AN |
|---|---|
| Datasheet | NGB8206AN NGB8206N Datasheet (PDF) |
| File Size | 117.26 KB |
| Manufacturer | onsemi |
| Description | Ignition IGBT |
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NGB8206N, NGB8206AN Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT).
| Part Number | Description |
|---|---|
| NGB8206N | Ignition IGBT |
| NGB8202AN | Ignition IGBT |
| NGB8202ANT4G | Ignition IGBT |
| NGB8202N | Ignition IGBT |
| NGB8202NT4G | Ignition IGBT |
| NGB8204AN | Ignition IGBT |
| NGB8204ANT4G | Ignition IGBT |
| NGB8204N | Ignition IGBT |
| NGB8204NT4G | Ignition IGBT |
| NGB8207ABN | Ignition IGBT |