NGB8206N Overview
NGB8206N, NGB8206AN Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT).
NGB8206N Applications
- Ideal for Coil−on−Plug and Driver−on−Coil Applications
- Gate−Emitter ESD Protection
NGB8206N Datasheet Details
| Part number | NGB8206N |
|---|---|
| Datasheet | NGB8206N_ONSemiconductor.pdf |
| File Size | 117.26 KB |
| Manufacturer | onsemi |
| Description | Ignition IGBT |
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