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NGB8207ABNT4G - Ignition IGBT

Download the NGB8207ABNT4G datasheet PDF. This datasheet also covers the NGB8207AN variant, as both devices belong to the same ignition igbt family and are provided as variant models within a single manufacturer datasheet.

Features

  • monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NGB8207AN_ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
NGB15T65M3DFP 650V 15A trench field-stop IGBT nexperia

Other Datasheets by onsemi

Part Number Description
NGB8207ABN Ignition IGBT
NGB8207AN Ignition IGBT
NGB8207ANT4G Ignition IGBT
NGB8207BN Ignition IGBT
NGB8207BNT4G Ignition IGBT

Full PDF Text Transcription

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NGB8207AN, NGB8207ABN Ignition IGBT 20 A, 365 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.
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