NGB8207ABNT4G Datasheet | onsemi

NGB8207AN, NGB8207ABN Ignition IGBT 20 A, 365 V, N- Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) Features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. Features - Ideal for Coil- on- Plug and Driver- on- Coil Applications - Gate- Emitter ESD Protection - Temperature pensated Gate- Collector Voltage Clamp Limits Stress Applied to Load - Integrated ESD Diode Protection - Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices - Low Saturation...