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NGB8207AN Datasheet Ignition IGBT

Manufacturer: onsemi

Overview

NGB8207AN, NGB8207ABN Ignition IGBT 20 A, 365 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor.

Key Features

  • monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers.