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NGB8207AN - Ignition IGBT

Features

  • monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers.

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NGB8207AN, NGB8207ABN Ignition IGBT 20 A, 365 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.
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