NGD8209N
NGD8209N is Ignition IGBT manufactured by onsemi.
NGD8209N Ignition IGBT 12 A, 410 V
N- Channel DPAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) Features monolithic circuitry integrating ESD and Over- Voltage clamped protection for use in inductive coil drivers applications. Primary uses include motorbike ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.
Features http://onsemi.
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- Ideal for Coil- on- Plug Applications DPAK Package Offers Smaller Footprint and Increased Board Space Gate- Emitter ESD Protection Temperature pensated Gate- Collector Voltage Clamp Limits Stress Applied to Load Low Saturation Voltage High Pulsed Current Capability These are Pb- Free...
