NGD8209N Overview
NGD8209N Ignition IGBT 12 A, 410 V N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT).
Datasheet Details
| Part number | NGD8209N |
|---|---|
| Datasheet | NGD8209N-ONSemiconductor.pdf |
| File Size | 99.76 KB |
| Manufacturer | onsemi |
| Description | Ignition IGBT |
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