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NGD8209N Ignition IGBT 12 A, 410 V
N−Channel DPAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses include motorbike ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.
Features
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Ideal for Coil−on−Plug Applications DPAK Package Offers Smaller Footprint and Increased Board Space Gate−Emitter ESD Protection Temperature Compensated Gate−Collector Voltage Clamp Limits Stress Applied to Load Low Saturation Voltage High Pulsed Current Capability These are Pb−Free Devices
12 AMPS 410 VOLTS VCE(on) 3 2.0 V @ IC = 6.0 A, VGE . 4.
NGD8209NT4G Datasheet
