NGTB30N120L2WG - IGBT

Features

a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching.

onsemi

Datasheet Details

Part number	NGTB30N120L2WG
Manufacturer	onsemi
File Size	165.39 KB
Description	IGBT
Datasheet	NGTB30N120L2WG Datasheet

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Full PDF Text Transcription

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NGTB30N120L2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for motor driver applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.

Published: Oct 2, 2022 |