NGTB30N120LWG
NGTB30N120LWG is IGBT manufactured by onsemi.
IGBT
This Insulated Gate Bipolar Transistor (IGBT) Features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications. Offering both low on- state voltage and minimal switching loss, the IGBT is well suited for resonant or soft switching applications. Incorporated into the device is a rugged co- packaged free wheeling diode with a low forward voltage.
Features
- Low Saturation Voltage using Trench with Field Stop Technology
- Low Switching Loss Reduces System Power Dissipation
- Low Gate Charge
- 5 ms Short- Circuit Capability
- These are Pb- Free Devices
Typical Applications
- Inverter Welding Machines
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