NGTB30N135IHR1WG
NGTB30N135IHR1WG is IGBT manufactured by onsemi.
features a robust and cost effective Field Stop (FS) Trench construction, provides superior performance in demanding switching applications, and offers low on- state voltage with minimal switching losses. The IGBT is well suited for resonant or soft switching applications.
Features
- Extremely Efficient Trench with Fieldstop Technology
- 1350 V Breakdown Voltage
- Optimized for Low Losses in IH Cooker Application
- Designed for High System Level Robustness
- These are Pb- Free Devices
Typical Applications
- Inductive Heating
- Consumer Appliances
- Soft Switching
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector- emitter voltage @ TJ = 25°C
VCES
Collector current @ TC = 25°C @ TC = 100°C
IC A 60
Pulsed collector current, Tpulse limited by TJmax 10 ms pulse, VGE = 15 V
ICM 120 A
Diode forward current @ TC = 25°C @ TC = 100°C
IF A 60
Diode pulsed current, Tpulse limited by TJmax 10 ms pulse, VGE = 0 V
Gate- emitter voltage Transient Gate- emitter Voltage (Tpulse = 5 ms, D < 0.10)
Power Dissipation @ TC = 25°C @ TC = 100°C
IFM VGE
$20 ±25
394 197
Operating junction temperature range
Storage temperature range
Lead temperature for soldering, 1/8” from case for 5 seconds
TJ Tstg TSLD
- 40 to...
