NGTB30N135IHRWG
NGTB30N135IHRWG is IGBT manufactured by onsemi.
features a robust and cost effective Field Stop (FS) Trench construction, provides superior performance in demanding switching applications, and offers low on- state voltage with minimal switching losses. The IGBT is well suited for resonant or soft switching applications.
Features
- Extremely Efficient Trench with Fieldstop Technology
- 1350 V Breakdown Voltage
- Optimized for Low Losses in IH Cooker Application
- Reliable and Cost Effective Single Die Solution
- These are Pb- Free Devices
Typical Applications
- Inductive Heating
- Consumer Appliances
- Soft Switching
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector- emitter voltage @ TJ = 25°C Collector current
@ TC = 25°C @ TC = 100°C Pulsed collector current, Tpulse limited by TJmax 10 ms pulse, VGE = 15 V Diode forward current @ TC = 25°C @ TC = 100°C Diode pulsed current, Tpulse...
