NGTB30N140IHR3WG
NGTB30N140IHR3WG is IGBT manufactured by onsemi.
IGBT with Monolithic Free Wheeling Diode
This Insulated Gate Bipolar Transistor (IGBT) Features a robust and cost effective ultra Field Stop (FS) Trench construction and provides superior performance. It is especially designed for low on- state and is well suited for resonant or soft switching topologies, such as those used in inductive heating applications. The device contains a reverse conducting diode integrated on the same die, which makes the device construction very cost effective.
Features
- Extremely Efficient Trench with Ultra Field Stop Technology
- 1400 V Breakdown Voltage
- Optimized for Low Losses in IH Cooker Application
- Reliable and Cost Effective Single Die Solution
- These are Pb- Free Devices
Typical Applications
- Inductive Heating
- Consumer Appliances
- Soft...
