NGTB30N140IHR3WG - IGBT

Features

a robust and cost effective ultra Field Stop (FS) Trench construction and provides superior performance. It is especially designed for low on.
state and is well suited for resonant or soft switching topologies, such as those used in inductive heating.

onsemi

Datasheet Details

Part number	NGTB30N140IHR3WG
Manufacturer	onsemi
File Size	261.60 KB
Description	IGBT
Datasheet	NGTB30N140IHR3WG Datasheet

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Full PDF Text Transcription

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IGBT with Monolithic Free Wheeling Diode NGTB30N140IHR3WG This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective ultra Field Stop (FS) Trench construction and provides superior performance. It is especially designed for low on−state and is well suited for resonant or soft switching topologies, such as those used in inductive heating applications. The device contains a reverse conducting diode integrated on the same die, which makes the device construction very cost effective.

Published: Oct 3, 2022 |