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NJD2873T4 - Power Transistor

Datasheet Summary

Features

  • http://onsemi. com.
  • Pb.
  • Free Package is Available.
  • High DC Current Gain.
  • hFE = 120 (Min) @ IC = 500 mA = 40 (Min) @ IC = 2 A Low Collector.
  • Emitter Saturation Voltage.
  • VCE(sat) = 0.3 Vdc (Max) @ IC = 1 A High Current.
  • Gain.
  • Bandwidth Product.
  • fT = 65 MHz (Min) @ IC = 100 mA Epoxy Meets UL 94 V.
  • 0 @ 0.125 in ESD Ratings: Human Body Model, 3B u 8000 V Machine Model, C u 400 V 1.

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Datasheet Details

Part number NJD2873T4
Manufacturer ON Semiconductor
File Size 238.58 KB
Description Power Transistor
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www.DataSheet4U.com NJD2873T4 Plastic Power Transistors NPN Silicon DPAK For Surface Mount Applications Designed for high−gain audio amplifier applications. Features http://onsemi.com • Pb−Free Package is Available • High DC Current Gain − • • • • hFE = 120 (Min) @ IC = 500 mA = 40 (Min) @ IC = 2 A Low Collector−Emitter Saturation Voltage − VCE(sat) = 0.3 Vdc (Max) @ IC = 1 A High Current−Gain − Bandwidth Product − fT = 65 MHz (Min) @ IC = 100 mA Epoxy Meets UL 94 V−0 @ 0.125 in ESD Ratings: Human Body Model, 3B u 8000 V Machine Model, C u 400 V 1 2 Symbol VCB VCEO VEB Continuous Peak IC IB PD PD TJ, Tstg Value Unit SILICON POWER TRANSISTORS 2 AMPERES 50 VOLTS 12.
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