NJD2873T4 Datasheet | onsemi

Features http://onsemi. - Pb- Free Package is Available - High DC Current Gain - - - - - h FE = 120 (Min) @ IC = 500 m A = 40 (Min) @ IC = 2 A Low Collector- Emitter Saturation Voltage - VCE(sat) = 0.3 Vdc (Max) @ IC = 1 A High Current- Gain - Bandwidth Product - f T = 65 MHz (Min) @ IC = 100 m A Epoxy Meets UL 94 V- 0 @ 0.125 in ESD Ratings: Human Body Model, 3B u 8000 V Machine Model, C u 400 V 1 2 Symbol VCB VCEO VEB Continuous Peak IC IB PD PD TJ, Tstg Value Unit SILICON POWER TRANSISTORS 2 AMPERES 50 VOLTS 12.5 WATTS MARKING DIAGRAM MAXIMUM RATINGS Rating Collector- Base Voltage Collector- Emitter Voltage Emitter- Base Voltage Collector Current Base Current Total Device Dissipation @ TC = 25°C Derate above 25°C Total Device Dissipation @ TA = 25°C- Derate above 25°C Operating and Storage Junction Temperature Range DPAK CASE 369C STYLE 1 YWW J 2873 3 ee Data Sh 50 Vdc . 50 5 2 3 0.4 12.5 0.1 1.4 0.011 - 65 to +150 Vdc Vdc Adc Adc W W/°C W W/°C °C Y WW = Year = Work Week ORDERING INFORMATION Device NJD2873T4 NJD2873T4G Package DPAK DPAK (Pb- Free) Shipping† 2500 Units / Reel 2500 Units / Reel Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. THERMAL CHARACTERISTICS Characteristic Thermal Resistance Junction- to- Case Junction- to- Ambient- Symbol Rq JC Rq JA Max 10 89.3 Unit °C/W - These ratings are applicable when surface mounted on the minimum pad sizes remended. . © Semiconductor ponents Industries, LLC, 2004 August, 2004 - Rev. 3 Publication Order Number: NJD2873T4/D . Data Sheet 4 U...