NJD2873
NJD2873 is Silicon NPN Power Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.3V(Max)( IC= 1A; IB= 50m A)
- DC Current Gain -h FE = 120(Min)@ IC= 0.5A
- High Current-Gain- Bandwidth Product
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for high-gain audio amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current
Total Power Dissipation
@ TC=25℃ Collector Power Dissipation
Ta=25℃
Junction Temperature
15 W
℃
Tstg
Storage Temperature Range
-65~150...
