NJD2873 Datasheet
NJD2873 Datasheet (onsemi)
onsemi
NJD2873, NJVNJD2873 Power Transistors NPN Silicon DPAK For Surface Mount Applications Designed for high−gain audio amplifier applications. Features • High DC Current Gain • Low Collector−Emitter Sa.
* High DC Current Gain
* Low Collector
*Emitter Saturation Voltage
* High Current
*Gain
* Bandwidth Product
* Epoxy Meets UL 94 V
*0 @ 0.125 in
* NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC
*Q101
Qualified and PPAP Capable
* These Devices a.
NJD2873 Datasheet (Inchange Semiconductor)
Inchange Semiconductor
·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.3V(Max)( IC= 1A; IB= 50mA) ·DC Current Gain -hFE = 120(Min)@ IC= 0.5A ·High Current-Gain—Bandwidth Product ·Minimum Lot-to-Lot variations for r.
s registered trademark isc Silicon NPN Power Transistor NJD2873 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBO L PARAMETER CONDITIONS V (SUS)CEO Collector-Emitter Breakdown Voltage IC=10mA, IB=0 MIN TYP MAX UNIT 50 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1.