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NJW21193G - Silicon Power Transistors

Download the NJW21193G datasheet PDF. This datasheet also covers the NJW21194G variant, as both devices belong to the same silicon power transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Total Harmonic Distortion Characterized.
  • High DC Current Gain.
  • Excellent Gain Linearity.
  • High SOA.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NJW21194G_ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number NJW21193G
Manufacturer onsemi
File Size 116.05 KB
Description Silicon Power Transistors
Datasheet download datasheet NJW21193G Datasheet

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NJW21194G Silicon Power Transistors
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
NJW21193G (PNP) NJW21194G (NPN) Silicon Power Transistors The NJW21193G and NJW21194G utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. Features • Total Harmonic Distortion Characterized • High DC Current Gain • Excellent Gain Linearity • High SOA • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector−Emitter Voltage − 1.5 V Collector Current − Continuous Collector Current − Peak (Note 1) Base Current − Continuous Total Power Dissipation @ TC = 25°C Derate Above 25°C VCEO VCBO VEBO VCEX IC ICM IB PD 250 Vdc 400 Vdc 5.0 Vdc 400 Vdc 16 Adc 30 Adc 5.0 Adc 200 W 1.