NJW21194G - Silicon Power Transistors

onsemi

Key Features

Total Harmonic Distortion Characterized.
High DC Current Gain.
Excellent Gain Linearity.
High SOA.
These Devices are Pb.
Free and are RoHS Compliant.

NJW21194G silicon power transistors by onsemi - Datasheet Preview

Datasheet Details

Part number	NJW21194G
Manufacturer	onsemi
File Size	116.05 KB
Description	Silicon Power Transistors
Datasheet	NJW21194G Datasheet

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NJW21193G (PNP) NJW21194G (NPN) Silicon Power Transistors The NJW21193G and NJW21194G utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. Features • Total Harmonic Distortion Characterized • High DC Current Gain • Excellent Gain Linearity • High SOA • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector−Emitter Voltage − 1.5 V Collector Current − Continuous Collector Current − Peak (Note 1) Base Current − Continuous Total Power Dissipation @ TC = 25°C Derate Above 25°C VCEO VCBO VEBO VCEX IC ICM IB PD 250 Vdc 400 Vdc 5.0 Vdc 400 Vdc 16 Adc 30 Adc 5.0 Adc 200 W 1.