NMLU1210 Datasheet | onsemi

Full Bridge Rectifier Dual 20 V N- Channel with dual 3.2 A Schottky Barrier Diode, 4.0 x 4.0 x 0.5 mm m Cool™ Package Features - Full- Bridge Rectifier Block - Up to 3.2 A operation - Low RDS(on) MOSFET to minimize conduction loss - Low gate charge MOSFET - Low VF Schottky diode - Ultra Low Inductance Package - This Device uses Halogen- Free Molding pound - These are Pb- Free Devices Applications - Wireless Charging - AC- DC Rectification - Optimized for Power Management Applications for Portable Products, such as Cell Phones, PMP, DSC, GPS, and others RECTIFIER MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Input voltage between two MOSFET drain Bridge Operating Junction and Storage Temperature VLL TJ, TSTG - 55 to V °C Lead Temperature for Soldering Purposes (1/8” from case for 10 s) 260 °C Continuous Drain Current R_JA (Note 1) TA = 25°C TA = 85°C 2.2 A 1.16 Power Dissipation R_JA (Note 1) TA = 25°C TA =...