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NO1L6183A

Manufacturer: onsemi

NO1L6183A datasheet by onsemi.

NO1L6183A datasheet preview

NO1L6183A Datasheet Details

Part number NO1L6183A
Datasheet NO1L6183A-ONSemiconductor.pdf
File Size 228.18 KB
Manufacturer onsemi
Description 1Mb Ultra-Low Power Asynchronous CMOS SRAM
NO1L6183A page 2 NO1L6183A page 3

NO1L6183A Overview

The device is designed and fabricated using ON Semiconductor’s advanced CMOS technology to provide both high-speed performance and ultra-low power. The device operates with a single chip enable (CE) control and output enable (OE) to allow for easy memory expansion. Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently.

NO1L6183A Key Features

  • Single Wide Power Supply Range 1.65 to 2.2 Volts
  • Very low standby current 0.5µA at 1.8V (Typical)
  • Very low operating current 0.7mA at 1.8V and 1µs (Typical)
  • Very low Page Mode operating current 0.5mA at 1.8V and 1µs (Typical)
  • Simple memory control Single Chip Enable (CE) Byte control for independent byte operation Output Enable (OE) for memory
  • Low voltage data retention Vcc = 1.2V
  • Very fast output enable access time 30ns OE access time
  • Automatic power down to standby mode
  • TTL patible three-state output driver
  • pact space saving BGA package available

NO1L6183A Applications

  • Single Wide Power Supply Range 1.65 to 2.2 Volts
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