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NO1L6183A - 1Mb Ultra-Low Power Asynchronous CMOS SRAM

General Description

©2008 SCILLC.

All rights reserved.

July 2008 - Rev.

Key Features

  • Single Wide Power Supply Range 1.65 to 2.2 Volts.
  • Very low standby current 0.5µA at 1.8V (Typical).
  • Very low operating current 0.7mA at 1.8V and 1µs (Typical).
  • Very low Page Mode operating current 0.5mA at 1.8V and 1µs (Typical).
  • Simple memory control Single Chip Enable (CE) Byte control for independent byte operation Output Enable (OE) for memory expansion.
  • Low voltage data retention Vcc = 1.2V.
  • Very fast output enable access time.

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Datasheet Details

Part number NO1L6183A
Manufacturer onsemi
File Size 228.18 KB
Description 1Mb Ultra-Low Power Asynchronous CMOS SRAM
Datasheet download datasheet NO1L6183A Datasheet

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N01L6183A 1Mb Ultra-Low Power Asynchronous CMOS SRAM 64K × 16 bit Overview The N01L6183A is an integrated memory device containing a 1 Mbit Static Random Access Memory organized as 65,536 words by 16 bits. The device is designed and fabricated using ON Semiconductor’s advanced CMOS technology to provide both high-speed performance and ultra-low power. The device operates with a single chip enable (CE) control and output enable (OE) to allow for easy memory expansion. Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently. The N01L6183A is optimal for various applications where low-power is critical such as battery backup and hand-held devices.