NRVBA2H100NT3G Datasheet | onsemi

DATA SHEET .onsemi. Surface Mount Schottky Power Rectifier SMA/SMB Power Surface Mount Package MBRS2H100T3G, NBRS2H100T3G, NBRS2H100NT3G, MBRA2H100T3G, NRVBA2H100T3G, NRVBA2H100NT3G This device employs the Schottky Barrier principle in a metal- to- silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. Features - pact Package with J- Bend Leads Ideal for Automated Handling - Highly Stable Oxide Passivated Junction - Guard- Ring for Overvoltage Protection - Low Forward Voltage Drop - NBR and NRVB Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC- Q101 Qualified and PPAP Capable- Mechanical Characteristics - Case: Molded Epoxy - Epoxy Meets UL 94 V- 0 @ 0.125 in - Weight: 70 mg (SMA), 95 mg (SMB) (Approximately) - Cathode Polarity Band - Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds - Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable - ESD Ratings: - Charged Device Model > 1000 V (Class C5) - Human Body Model = 3B - These Devices are Pb- Free and are Ro HS pliant - Device Meets MSL1 Requirements SCHOTTKY BARRIER RECTIFIER 2.0 AMPERES, 100 VOLTS MARKING DIAGRAMS SMA CASE...