NSBA114YDXV6 Datasheet | onsemi

MUN5114DW1, NSBA114YDXV6, NSBA114YDP6 Dual PNP Bias Resistor Transistors R1 = 10 k W, R2 = 47 k W PNP Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base- emitter resistor. The BRT eliminates these individual ponents by integrating them into a single device. The use of a BRT can reduce both system cost and board space. Features - S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable - Simplifies Circuit Design - Reduces Board Space - Reduces ponent Count - These Devices are Pb- Free, Halogen Free/BFR Free and are Ro HS pliant MAXIMUM RATINGS (TA = 25°C, mon for Q1 and Q2, unless otherwise noted) Rating Symbol Max Unit Collector- Base Voltage VCBO Vdc Collector- Emitter Voltage VCEO Vdc Collector Current - Continuous 100 m Adc Input Forward Voltage VIN(fwd) Vdc Input Reverse Voltage VIN(rev)...