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NSL05TT1
High Current Surface Mount PNP Silicon Low VCE(sat) Transistor for Battery Operated Applications
MAXIMUM RATINGS (TA = 25°C) Rating
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current − Peak Collector Current − Continuous
Electrostatic Discharge
Symbol VCEO VCBO VEBO IC
ESD
THERMAL CHARACTERISTICS
Characteristic
Symbol
Total Device Dissipation TA = 25°C Derate above 25°C
PD (Note 1)
Thermal Resistance, Junction to Ambient
RθJA (Note 1)
Total Device Dissipation TA = 25°C Derate above 25°C
PD (Note 2)
Thermal Resistance, Junction to Ambient
RθJA (Note 2)
Thermal Resistance, Junction to Lead #3
RθJL
Junction and Storage Temperature Range
TJ, Tstg
1. FR−4 @ Minimum Pad 2. FR−4 @ 1.0 X 1.0 inch Pad
Max Unit
−5.0
Vdc
−10 Vdc
−4.