Datasheet4U Logo Datasheet4U.com

NSR01F30NXT5G Datasheet Schottky Barrier Diode

Manufacturer: onsemi

Overview: Schottky Barrier Diode NSR01F30NXT5G These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current. The DSN2 (Dual Silicon No−lead) package is a chip level package using solderable metal contacts under the package similar to DFN style packages. The DSN style package enables 100% utilization of the package area for active silicon, offering a significant performance per board area advantage pared to products in plastic molded packages. The low thermal resistance enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements.

Key Features

  • Very Low Forward Voltage Drop.
  • 370 mV @ 10 mA.
  • Low Reverse Current.
  • 7.0 mA @ 10 V VR.
  • 100 mA of Continuous Forward Current.
  • ESD Rating.
  • Human Body Model: Class 3B ESD Rating.
  • Machine Model: Class C.
  • Very High Switching Speed.
  • Low Capacitance.
  • CT = 7 pF.
  • This is a Halide.
  • Free Device.
  • This is a Pb.
  • Free Device Typical.

More Datasheets from onsemi

Part Number Description
NSR01F30MX Schottky Barrier Diode
NSR0130M2T5G Schottky Barrier Diode
NSR0130P2 Schottky Barrier Diode
NSR0140M2T5G Schottky Barrier Diode
NSR0140P2T5G Schottky Barrier Diode
NSR0170 Schottky Barrier Diode
NSR01L30MX Schottky Barrier Diode
NSR01L30NXT5G Schottky Barrier Diode
NSR02100HT1G Schottky Barrier Diode
NSR0230M2T5G Schottky Barrier Diode

NSR01F30NXT5G Distributor