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NSR01F30NXT5G - Schottky Barrier Diode

Key Features

  • Very Low Forward Voltage Drop.
  • 370 mV @ 10 mA.
  • Low Reverse Current.
  • 7.0 mA @ 10 V VR.
  • 100 mA of Continuous Forward Current.
  • ESD Rating.
  • Human Body Model: Class 3B ESD Rating.
  • Machine Model: Class C.
  • Very High Switching Speed.
  • Low Capacitance.
  • CT = 7 pF.
  • This is a Halide.
  • Free Device.
  • This is a Pb.
  • Free Device Typical.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Schottky Barrier Diode NSR01F30NXT5G These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current. The DSN2 (Dual Silicon No−lead) package is a chip level package using solderable metal contacts under the package similar to DFN style packages. The DSN style package enables 100% utilization of the package area for active silicon, offering a significant performance per board area advantage compared to products in plastic molded packages. The low thermal resistance enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements. Features • Very Low Forward Voltage Drop − 370 mV @ 10 mA • Low Reverse Current − 7.