NSR1020MW2T1G
NSR1020MW2T1G is Schottky Barrier Diodes manufactured by onsemi.
atures http://onsemi.
HIGH CURRENT SCHOTTKY BARRIER DIODE
- Low Forward Voltage
- 0.24 Volts (Typ) @ IF = 10 m Adc
- High Current Capability
- ESD Rating
- Human Body Model: CLASS 3B
- Machine Model: C
1 CATHODE
2 ANODE
- Pb- Free Packages are Available
MAXIMUM RATINGS (TJ = 125°C unless otherwise noted)
Rating Reverse Voltage Peak Revese Voltage Forward Power Dissipation @ TA = 25°C Derate above 25°C Forward Current (DC) Continuous Forward Current t = 8.3 ms Half Sinewave Junction Temperature Storage Temperature Range Symbol VR VRM PF 200 2.0 IF 1 IF 5 TJ Tstg 125 Max
- 55 to +150 °C °C A m W m W/°C A Value 20 30 Unit Vdc V 1 SOD- 323 CASE 477 STYLE 1
MARKING DIAGRAM
RE MG G M
RE = Specific Device Code M = Date Code G = Pb- Free Package (Note: Microdot may be in either location)
ORDERING INFORMATION
Device Package Shipping †
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Remended Operating Conditions is not implied. Extended exposure to stresses above the Remended Operating Conditions may affect device reliability.
NSR1020MW2T1G SOD- 323 3000/Tape & Reel (Pb- Free) NSR1020MW2T3G SOD- 323 10,000/Tape & Reel (Pb- Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
© Semiconductor ponents Industries, LLC, 2006
August, 2006
- Rev. 0
Publication Order Number: NSR1020MW2T1/D
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Total Capacitance (VR = 5.0 V, f = 1.0 MHz) Reverse Leakage (VR = 15 V) Forward Voltage (IF = 1 m Adc) Forward Voltage (IF = 10 m Adc) Forward Voltage (IF = 100 m Adc) Forward Voltage (IF = 500 m Adc) Forward Voltage (IF = 1000 m Adc) Symbol CT IR VF VF VF VF VF Min
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