NST3906F3T5G
NST3906F3T5G is PNP Transistor manufactured by onsemi.
Features
- h FE, 100- 300
- Low VCE(sat), ≤ 0.4 V
- Reduces Board Space
- This is a Pb- Free Device
MAXIMUM RATINGS
Rating Collector
- Emitter Voltage Collector
- Base Voltage Emitter
- Base Voltage Collector Current
- Continuous THERMAL CHARACTERISTICS
Symbol VCEO VCBO VEBO IC
Value
- 40
- 40
- 5.0
- 200
Unit Vdc Vdc Vdc m Adc
Characteristic Total Device Dissipation, TA = 25°C
Derate above 25°C
Symbol PD
(Note 1)
Max
290 2.3
Unit m W m W/°C
Thermal Resistance, Junction- to- Ambient
Rq JA (Note 1)
°C/W
Total Device Dissipation, TA = 25°C Derate above 25°C
PD 347 m W (Note 2)...
