NSVBAS21HT3G Datasheet | onsemi

BAS21HT1G, NSVBAS21HT1G, NSVBAS21HT3G High Voltage Switching Diode http://onsemi. Features - NSV Prefix for Automotive and Other Applications Requiring - Unique Site and Control Change Requirements; AEC- Q101 Qualified and PPAP Capable These are Pb- Free Devices HIGH VOLTAGE SWITCHING DIODE MAXIMUM RATINGS Rating Continuous Reverse Voltage Repetitive Peak Reverse Voltage Peak Forward Current Repetitive Peak Forward Current Non- Repetitive Peak Forward Surge Current, 60 Hz Non- Repetitive Peak Forward Current (Square Wave, TJ = 25°C prior to surge) t = 1 ms t = 10 ms t = 100 ms t = 1 ms t=1s Symbol VR VRRM IF IFRM IFSM(surge) IFSM 20 20 10 4 1 Value 250 250 200 500 625 Unit Vdc Vdc m Adc m A m Adc A 1 1 CATHODE 2 ANODE 2 SOD- 323 CASE 477 STYLE 1 MARKING DIAGRAM JS M G G JS M G = Device Code = Date Code- = Pb- Free Package (Note: Microdot may be in either location) - Date Code orientation may vary depending upon manufacturing location. Unit m W m W/°C °C/W °C THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board, (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction- to- Ambient Junction and Storage Temperature Range Symbol PD Max 200 1.57 Rq JA TJ, Tstg 635 - 55 to +150 ORDERING INFORMATION Device BAS21HT1G NSVBAS21HT1G NSVBAS21HT3G Package SOD- 323 (Pb- Free) SOD- 323 (Pb- Free) SOD- 323 (Pb- Free) Shipping† 3000 / Tape & Reel 3000 / Tape & Reel 10000 / Tape & Reel Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Remended Operating Conditions is not implied. Extended exposure to stresses above the Remended Operating Conditions may affect device reliability. 1. FR- 5 Minimum Pad †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor ponents Industries, LLC, 2013 June, 2013 - Rev. 10 Publication Order Number:...