Full PDF Text Transcription for NSVF3007SG3 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
NSVF3007SG3. For precise diagrams, and layout, please refer to the original PDF.
NSVF3007SG3 Advance Information RF Transistor for Low Noise Amplifier This RF transistor is designed for low noise amplifier applications. MCPH package is suitable for us...
View more extracted text
for low noise amplifier applications. MCPH package is suitable for use under high temperature environment because it has superior heat radiation characteristics. This RF transistor is AEC-Q101 qualified and PPAP capable for automotive applications. Features Low-noise use : NF = 1.2 dB typ. (f = 1 GHz) High cut-off frequency : fT = 8 GHz typ. (VCE = 5 V) High gain : |S21e|2 = 12 dB typ.