NSVF6003SB6 - RF Transistor

Datasheet Summary

Features

High Gain (fT = 7 GHz typ).
High Current (IC = 150 mA).
Miniature and Thin 6 pin Package.
Large Collector Dissipation (800 mW).
AEC-Q101 qualified and PPAP capable.
Pb-Free, Halogen Free and RoHS compliance Typical.

ON Semiconductor

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Datasheet Details

Part number	NSVF6003SB6
Manufacturer	ON Semiconductor
File Size	496.51 KB
Description	RF Transistor
Datasheet	NSVF6003SB6 Datasheet
Additional preview pages of the NSVF6003SB6 datasheet.

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Full PDF Text Transcription

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NSVF6003SB6 Advance Information RF Transistor 12 V, 150 mA, fT = 7 GHz, NPN Single This RF transistor is designed for low noise amplifier applications. CPH package is suitable for use under high temperature environment because it has superior heat radiation characteristics. This RF transistor is AEC-Q101 qualified and PPAP capable for automotive applications.

Published: Feb 22, 2017 |