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NSVF6003SB6 - RF Transistor

Key Features

  • High Gain (fT = 7 GHz typ).
  • High Current (IC = 150 mA).
  • Miniature and Thin 6 pin Package.
  • Large Collector Dissipation (800 mW).
  • AEC-Q101 qualified and PPAP capable.
  • Pb-Free, Halogen Free and RoHS compliance Typical.

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Full PDF Text Transcription for NSVF6003SB6 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NSVF6003SB6. For precise diagrams, and layout, please refer to the original PDF.

NSVF6003SB6 Advance Information RF Transistor 12 V, 150 mA, fT = 7 GHz, NPN Single This RF transistor is designed for low noise amplifier applications. CPH package is sui...

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r is designed for low noise amplifier applications. CPH package is suitable for use under high temperature environment because it has superior heat radiation characteristics. This RF transistor is AEC-Q101 qualified and PPAP capable for automotive applications.

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