NTB4302 Datasheet | onsemi

Features N- Channel TO- 220 and D2PAK - - - - - Low RDS(on) Higher Efficiency Extending Battery Life Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified IDSS Specified at Elevated Temperature http://onsemi. .. Typical Applications 74 AMPERES 30 VOLTS RDS(on) = 9.3 mΩ Max N- Channel D - DC- DC Converters - Low Voltage Motor Control - Power Management in Portable and Battery Powered Products: Ie: puters, Printers, Cellular and Cordless Telephones, and PCMCIA Cards MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain- to- Source Voltage Drain- to- Gate Voltage (RGS = 10 MΩ) Gate- to- Source Voltage - Continuous Drain Current - Continuous @ TC = 25°C - Continuous @ TC = 100°C - Single Pulse (tpv10 µs) Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Temperature Range Single Pulse Drain- to- Source Avalanche Energy - Starting TJ = 25°C (VDD = 30 Vdc, VGS = 10 Vdc, L = 5.0 m H IL(pk) = 17 A, VDS = 30 Vdc, RG = 25 Ω) Thermal Resistance - Junction- to- Case - Junction- to- Ambient (Note 1) Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds Symbol VDSS VDGR VGS ID ID IDM PD TJ, Tstg EAS Value 30 30 "20 74 47 175 80 0.66 - 55 to +150 722 Adc Apk W W/°C °C m J 1 Unit Vdc Vdc Vdc 4 S 1 TO- 220AB CASE 221A STYLE 5 2 3 2 3 D2PAK CASE 418AA STYLE 2 4 MARKING DIAGRAMS & PIN ASSIGNMENTS 4 Drain 4 Drain NTx4302 LLYWW °C/W RθJC RθJA TL 1.55 70 260 °C 1 Gate 2 Drain 3 Source 1 Gate NTx4302 LLYWW 3 Source 2 Drain 1. When surface mounted to an FR4 Board using minimum remended Pad Size, (Cu Area 0.412 in2). 2. Current limited by internal lead wires. x NTx4302 LL Y WW = P or B = Device Code = Location Code = Year = Work Week ORDERING INFORMATION Device NTP4302 NTB4302 NTB4302T4 Package TO- 220AB D2PAK D2PAK Shipping 50 Units/Rail 50 Units/Rail 800/Tape & Reel © Semiconductor ponents Industries, LLC, 2003 October, 2003 - Rev. 1 Publication Order Number: NTP4302/D NTP4302, NTB4302 ELECTRICAL CHARACTERISTICS...