NTB5860N Datasheet | onsemi

NTB5860N, NTP5860N, NVB5860N N-Channel Power MOSFET 60 V, 220 A, 3.0 m W Features - Low RDS(on) - High Current Capability - 100% Avalanche Tested - These Devices are Pb- Free, Halogen Free and are Ro HS pliant - NVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC- Q101 Qualified and PPAP Capable MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified) Parameter Symbol Value Drain- to- Source Voltage Gate- to- Source Voltage - Continuous Continuous Drain Current, Rq JC Steady State TC = 25°C TC = 100°C Power Dissipation, Rq JC Steady State TC = 25°C Pulsed Drain Current tp = 10 ms Current Limited by Package Operating and Storage Temperature Range VDSS VGS ID IDM IDMmax TJ, Tstg 60 $20 220 156 283 660 130 - 55 to...