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NTBG014N120M3P - SiC MOSFET

Key Features

  • Typ. RDS(on) = 14 mW.
  • Low Switching Losses (Typ. EON 1331 mJ at 74 A, 800 V).
  • 100% Avalanche Tested Typical.

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Silicon Carbide (SiC) MOSFET – EliteSiC, 14 mohm, 1200 V, M3P, D2PAK-7L NTBG014N120M3P Features • Typ. RDS(on) = 14 mW • Low Switching Losses (Typ.