Datasheet Summary
Silicon Carbide (SiC) MOSFET
- EliteSiC, 14 mohm, 1200 V, M3P, D2PAK-7L
Features
- Typ. RDS(on) = 14 mW
- Low Switching Losses (Typ. EON 1331 mJ at 74 A, 800 V)
- 100% Avalanche Tested
Typical Applications
- Solar Inverters
- Electric Vehicle Charging Stations
- UPS (Uninterruptible Power Supplies)
- Energy Storage Systems
- SMPS (Switch Mode Power Supplies)
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Parameter
Value Unit
VDSS Drain- to- Source Voltage
VGS Gate- to- Source Voltage
- 10/+22 V
VGSop Remended Operation Values TC < 175°C
- 3/+18 V of Gate- Source Voltage
ID Continuous Drain
Steady TC = 25°C
Current (Notes 2, 3)
State
PD...