Datasheet Summary
DATA SHEET .onsemi.
Silicon Carbide (SiC) MOSFET
- EliteSiC, 20 mohm, 1200 V, M1, D2PAK-7L
Features
- Typ. RDS(on) = 20 mW
- Ultra Low Gate Charge (QG(tot) = 220 nC)
- High Speed Switching with Low Capacitance (Coss = 258 pF)
- 100% Avalanche Tested
- TJ = 175°C
- This Device is Halide Free and RoHS pliant with exemption 7a,
Pb- Free 2LI (on second level interconnection)
Typical Applications
- UPS
- DC- DC Converter
- Boost Inverter
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain- to- Source Voltage
Gate- to- Source Voltage
Remended Operation Values of Gate- to- Source Voltage
TC < 175°C
VDSS
- 15/+25 V
VGSop
-...