Datasheet Details
| Part number | NTBG025N065SC1 |
|---|---|
| Manufacturer | onsemi |
| File Size | 309.28 KB |
| Description | SiC MOSFET |
| Datasheet |
 NTBG025N065SC1 Datasheet
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Key Features
- Typ. RDS(on) = 19 mW @ VGS = 18 V Typ. RDS(on) = 25 mW @ VGS = 15 V.
- Ultra Low Gate Charge (QG(tot) = 164 nC).
- Low Output Capacitance (Coss = 278 pF).
- 100% Avalanche Tested.
- TJ = 175°C.
- RoHS Compliant Typical.