Datasheet Summary
Silicon Carbide (SiC) MOSFET
- EliteSiC, 19 mohm, 650 V, M2, D2PAK-7L
Features
- Typ. RDS(on) = 19 mW @ VGS = 18 V
Typ. RDS(on) = 25 mW @ VGS = 15 V
- Ultra Low Gate Charge (QG(tot) = 164 nC)
- Low Output Capacitance (Coss = 278 pF)
- 100% Avalanche Tested
- TJ = 175°C
- RoHS pliant
Typical Applications
- SMPS (Switching Mode Power Supplies)
- Solar Inverters
- UPS (Uninterruptable Power Supplies)
- Energy Storage
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain- to- Source Voltage
Gate- to- Source Voltage
Remended Operation Values of Gate
- Source Voltage
VDSS
- 8/+22 V
TC < 175°C VGSop
- 5/+18 V
Continuous Drain...