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NTBG028N170M1 Datasheet Sic MOSFET

Manufacturer: onsemi

Overview: Silicon Carbide (SiC) MOSFET – EliteSiC, 28 mohm, 1700 V, M1,.

Key Features

  • Typ. RDS(on) = 28 mW.
  • Ultra Low Gate Charge (typ. QG(tot) = 222 nC).
  • Low Effective Output Capacitance (typ. Coss = 200 pF).
  • 100% Avalanche Tested.
  • RoHS Compliant Typical.

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