Datasheet Summary
Silicon Carbide (SiC) MOSFET
- EliteSiC, 28 mohm, 1700 V, M1, D2PAK-7L
Features
- Typ. RDS(on) = 28 mW
- Ultra Low Gate Charge (typ. QG(tot) = 222 nC)
- Low Effective Output Capacitance (typ. Coss = 200 pF)
- 100% Avalanche Tested
- RoHS pliant
Typical Applications
- UPS
- DC- DC Converter
- Boost Converter
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain- to- Source Voltage
Gate- to- Source Voltage
Remended Operation Values of Gate- to- Source Voltage
TC < 175°C
VDSS
- 15/+25 V
VGSop
- 5/+20 V
Continuous Drain Current (Note 2)
Steady TC = 25°C
State
Power Dissipation (Note 2)
428 W
Continuous Drain...