NTBG028N170M1 - SiC MOSFET

onsemi

Key Features

Typ. RDS(on) = 28 mW.
Ultra Low Gate Charge (typ. QG(tot) = 222 nC).
Low Effective Output Capacitance (typ. Coss = 200 pF).
100% Avalanche Tested.
RoHS Compliant Typical.

NTBG028N170M1 sic mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	NTBG028N170M1
Manufacturer	onsemi
File Size	294.44 KB
Description	SiC MOSFET
Datasheet	NTBG028N170M1 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
NTB0101	Dual supply translating transceiver	NXP
NTB0101A	Auto direction sensing dual supply	NXP
NTB0102	Dual supply translating transceiver	NXP
NTB0102-Q100	Dual supply translating transceiver	NXP
NTB0104	Dual supply translating transceiver	NXP

Other Datasheets by onsemi

Part Number	Description
NTBG020N090SC1	SiC MOSFET
NTBG020N120SC1	SiC MOSFET
NTBG025N065SC1	SiC MOSFET
NTBG014N120M3P	SiC MOSFET
NTBG015N065SC1	SiC MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Silicon Carbide (SiC) MOSFET – EliteSiC, 28 mohm, 1700 V, M1, D2PAK-7L NTBG028N170M1 Features • Typ. RDS(on) = 28 mW • Ultra Low Gate Charge (typ. QG(tot) = 222 nC) • Low Effective Output Capacitance (typ.