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MOSFET - Power, Single N-Channel, D2PAK7
100 V, 4.1 mW, 203 A
NTBGS004N10G
Features
• Low RDS(on) • High Current Capability • Wide SOA • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• Hot Swap in 48 V Systems
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
100
V
Gate−to−Source Voltage
VGS
±20
V
Continuous Drain Current RqJC (Note 2)
Power Dissipation RqJC (Note 2)
ID
Steady State
TC = 25°C
PD
203
A
340 W
Continuous Drain Current RqJA (Notes 1, 2)
Power Dissipation RqJA (Notes 1, 2)
ID
Steady State
TA = 25°C
PD
21
A
3.
NTBGS004N10G Datasheet
