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MOSFET - Single N-Channel
150 V, 4.1 mW, 185 A
NTBGS4D1N15MC
Features
Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses Lowers Switching Noise/EMI These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
Power Tools, Battery Operated Vacuums UAV/Drones, Material Handling BMS/Storage, Home Automation
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
150
V
Gate−to−Source Voltage
VGS
20
V
Continuous Drain Current RqJC (Note 2)
Power Dissipation RqJC (Note 2)
ID
Steady State
TC = 25C
PD
185
A
316 W
Continuous Drain Current RqJA (Notes 1, 2)
Power Dissipation RqJA (Notes 1, 2)
ID
Steady State
TA = 25C
PD
20
A
3.
NTBGS4D1N15MC Datasheet
