Datasheet4U Logo Datasheet4U.com

NTBL032N065M3S - SiC MOSFET

Key Features

  • Typical RDS(on) = 32 mW @ VGS = 18 V.
  • Ultra Low Gate Charge (QG(tot) = 55 nC).
  • High Speed Switching with Low Capacitance (Coss = 113 pF).
  • 100% Avalanche Tested.
  • This Device is Halide Free and RoHS Compliant with Exemption 7a, Pb.
  • Free 2LI (on second level interconnection).

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
NTBL023N065M3S SiC MOSFET onsemi
NTB0101 Dual supply translating transceiver NXP
NTB0101A Auto direction sensing dual supply NXP
NTB0102 Dual supply translating transceiver NXP
NTB0102-Q100 Dual supply translating transceiver NXP

Other Datasheets by onsemi

Part Number Description
NTBL045N065SC1 SiC MOSFET
NTBL050N65S3H N-Channel MOSFET
NTBL070N65S3 N-Channel MOSFET
NTBL075N065SC1 SiC MOSFET
NTBL095N65S3H N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silicon Carbide (SiC) MOSFET – EliteSiC, 32 mohm, 650 V, M3S, TOLL NTBL032N065M3S Features • Typical RDS(on) = 32 mW @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 55 nC) • High Speed Switching with Low Capacitance (Coss = 113 pF) • 100% Avalanche Tested • This Device is Halide Free and RoHS Compliant with Exemption 7a, Pb−Free 2LI (on second level interconnection) Applications • SMPS (Switching Mode Power Supplies) • Solar Inverters • UPS (Uninterruptable Power Supplies) • Energy Storage • EV Charging Infrastructure DATA SHEET www.onsemi.