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NTBL032N065M3S - SiC MOSFET

Datasheet Summary

Features

  • Typical RDS(on) = 32 mW @ VGS = 18 V.
  • Ultra Low Gate Charge (QG(tot) = 55 nC).
  • High Speed Switching with Low Capacitance (Coss = 113 pF).
  • 100% Avalanche Tested.
  • This Device is Halide Free and RoHS Compliant with Exemption 7a, Pb.
  • Free 2LI (on second level interconnection).

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Silicon Carbide (SiC) MOSFET – EliteSiC, 32 mohm, 650 V, M3S, TOLL NTBL032N065M3S Features • Typical RDS(on) = 32 mW @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 55 nC) • High Speed Switching with Low Capacitance (Coss = 113 pF) • 100% Avalanche Tested • This Device is Halide Free and RoHS Compliant with Exemption 7a, Pb−Free 2LI (on second level interconnection) Applications • SMPS (Switching Mode Power Supplies) • Solar Inverters • UPS (Uninterruptable Power Supplies) • Energy Storage • EV Charging Infrastructure DATA SHEET www.onsemi.
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