NTBL045N065SC1 Description
Silicon Carbide (SiC) MOSFET EliteSiC, 33 mohm, 650 V, M2, TOLL NTBL045N065SC1.
NTBL045N065SC1 Key Features
- Typ. RDS(on) = 33 mW @ VGS = 18 V
- Ultra Low Gate Charge (QG(tot) = 105 nC)
- Low Effective Output Capacitance (Coss = 162 pF)
- 100% Avalanche Tested
- TJ = 175°C
- RoHS pliant