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Silicon Carbide (SiC) MOSFET – EliteSiC, 33 mohm, 650 V, M2, TOLL
NTBL045N065SC1
Features
• Typ. RDS(on) = 33 mW @ VGS = 18 V
Typ. RDS(on) = 45 mW @ VGS = 15 V
• Ultra Low Gate Charge (QG(tot) = 105 nC) • Low Effective Output Capacitance (Coss = 162 pF) • 100% Avalanche Tested • TJ = 175°C • RoHS Compliant
Typical Applications
• SMPS (Switching Mode Power Supplies) • Solar Inverters • UPS (Uninterruptable Power Supplies) • Energy Storage
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Recommended Operation Values of Gate − Source Voltage
TC < 175°C
VDSS
650
V
VGS −8/+22.
NTBL045N065SC1 Datasheet
