NTBL045N065SC1 Overview
Key Features
- Typ. RDS(on) = 33 mW @ VGS = 18 V Typ. RDS(on) = 45 mW @ VGS = 15 V
- Ultra Low Gate Charge (QG(tot) = 105 nC)
- Low Effective Output Capacitance (Coss = 162 pF)
- 100% Avalanche Tested
- RoHS Compliant
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| AP9563GH | Advanced Power Electronics Corp | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| FCPF360N65S3R0L | onsemi | N-Channel MOSFET |
| A2SHB | HAOHAI | N-Channel MOSFET |