NTBL075N065SC1
NTBL075N065SC1 is manufactured by onsemi.
Silicon Carbide (SiC) MOSFET
- EliteSiC, 56 mohm, 650 V, M2, TOLL
Features
- Typ. RDS(on) = 56 mW @ VGS = 18 V
Typ. RDS(on) = 75 mW @ VGS = 15 V
- Ultra Low Gate Charge (QG(tot) = 59 nC)
- Low Effective Output Capacitance (Coss = 109 pF)
- 100% Avalanche Tested
- TJ = 175°C
- RoHS pliant
Typical Applications
- SMPS (Switching Mode Power Supplies)
- Solar Inverters
- UPS (Uninterruptable Power Supplies)
- Energy Storage
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Drain- to- Source Voltage Gate- to- Source Voltage
Remended Operation Values of Gate
- Source Voltage
TC < 175°C
Symbol Value Unit
VDSS
- 8/+22.6 V
VGSop
- 5/+18 V
Continuous...
