NTCR013N120M3S Overview
Key Specifications
Description
Silicon Carbide (SiC) MOSFET uses a completely new technology that provides superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge.
Key Features
- Typ. RDS(on) = 13 mW @ VGS = 18 V
- Low Switching Losses (Typ. EON 563 J at 75 A, 800 V)
