NTCR013N120M3S Description
Silicon Carbide (SiC) MOSFET uses a pletely new technology that provides superior switching performance and higher reliability pared to Silicon. In addition, the low ON resistance and pact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
NTCR013N120M3S Key Features
- Typ. RDS(on) = 13 mW @ VGS = 18 V
- Low Switching Losses (Typ. EON 563 J at 75 A, 800 V)