NTCR013N120M3S
NTCR013N120M3S is manufactured by onsemi.
Silicon Carbide (SiC) MOSFET
- EliteSiC, 13 mohm, 1200 V, M3S, Die
Description Silicon Carbide (SiC) MOSFET uses a pletely new technology that provides superior switching performance and higher reliability pared to Silicon. In addition, the low ON resistance and pact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Features
- Typ. RDS(on) = 13 mW @ VGS = 18 V
- Low Switching Losses (Typ. EON 563 J at 75 A, 800 V)
Applications
- Solar Inverters
- Electric Vehicle Charging Stations
- Uninterruptible Power Supplies (UPS)
-...
