Datasheet4U Logo Datasheet4U.com

NTCR040N120M3S Datasheet Sic MOSFET

Manufacturer: onsemi

Overview: Silicon Carbide (SiC) MOSFET – EliteSiC, 40 mohm, 1200 V, M3S, Die Product Preview.

General Description

Silicon Carbide (SiC) MOSFET uses a pletely new technology that provides superior switching performance and higher reliability pared to Silicon.

In addition, the low ON resistance and pact chip size ensure low capacitance and gate charge.

Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

Key Features

  • Typ. RDS(on) = 40 mW @ VGS = 18 V.
  • Ultra Low Gate Charge (QG(tot) = 75 nC).
  • High Speed Switching with Low Capacitance (Coss = 80 pF).

NTCR040N120M3S Distributor