NTCR040N120M3S Overview
Description
Silicon Carbide (SiC) MOSFET uses a completely new technology that provides superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge.
Key Features
- Typ. RDS(on) = 40 mW @ VGS = 18 V
- Ultra Low Gate Charge (QG(tot) = 75 nC)
- High Speed Switching with Low Capacitance (Coss = 80 pF)
