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NTD12N10 - Power MOSFET

Key Features

  • http://onsemi. com V(BR)DSS 100 V RDS(on) TYP 165 mW @ 10 V N.
  • Channel D ID MAX 12 A.
  • Source.
  • to.
  • Drain Diode Recovery Time Comparable to a Discrete.
  • Fast Recovery Diode Avalanche Energy Specified IDSS and RDS(on) Specified at Elevated Temperature Mounting Information Provided for the DPAK Package These are Pb.
  • Free Devices Typical.

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NTD12N10 Power MOSFET 12 Amps, 100 Volts N−Channel Enhancement−Mode DPAK Features http://onsemi.com V(BR)DSS 100 V RDS(on) TYP 165 mW @ 10 V N−Channel D ID MAX 12 A • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • • Fast Recovery Diode Avalanche Energy Specified IDSS and RDS(on) Specified at Elevated Temperature Mounting Information Provided for the DPAK Package These are Pb−Free Devices Typical Applications • PWM Motor Controls • Power Supplies • Converters MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Drain−to−Source Voltage (RGS = 1.