NTD4979N Description
NTD4979N Power MOSFET 30 V, 41 A, Single N−Channel, DPAK/IPAK.
NTD4979N Key Features
- Low RDS(on) to Minimize Conduction Losses
- Low Capacitance to Minimize Driver Losses
- Optimized Gate Charge to Minimize Switching Losses
- Three Package Variations for Design Flexibility
- These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS