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NTD4979N - Power MOSFET

Key Features

  • Low RDS(on) to Minimize Conduction Losses.
  • Low Capacitance to Minimize Driver Losses.
  • Optimized Gate Charge to Minimize Switching Losses.
  • Three Package Variations for Design Flexibility.
  • These Devices are Pb.
  • Free, Halogen Free/BFR Free and are RoHS Compliant.

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NTD4979N Power MOSFET 30 V, 41 A, Single N−Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • Three Package Variations for Design Flexibility • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • CPU Power Delivery • DC−DC Converters MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) TA = 25°C TA = 100°C VDSS VGS ID 30 ±20 12.7 9.