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NTD5413N - Power MOSFET

Key Features

  • Low RDS(on).
  • High Current Capability.
  • Avalanche Energy Specified.
  • These are Pb.
  • Free Devices.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NTD5413N Power MOSFET 30 Amps, 60 Volts Single N−Channel DPAK Features • Low RDS(on) • High Current Capability • Avalanche Energy Specified • These are Pb−Free Devices Applications • LED Lighting and LED Backlight Drivers • DC−DC Converters • DC Motor Drivers • Switch Mode Power Supplies • Power Supplies Secondary Side Synchronous Rectification MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 60 V Gate−to−Source Voltage − Continuous VGS $20 V Gate−to−Source Voltage − Nonrepetitive (TP < 10 ms) VGS $30 V Continuous Drain Steady TC = 25°C ID Current RqJC (Note 1) State TC = 100°C 30 A 23 Power Dissipation Steady TC = 25°C PD RqJC (Note 1) State 68 W Pulsed Drain Current tp = 10 ms IDM 84 A Ope