NTD5P06V Datasheet | onsemi

.. MTD5P06V Preferred Device Power MOSFET 5 Amps, 60 Volts P- Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and mutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and mutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. - Avalanche Energy Specified - IDSS and VDS(on) Specified at Elevated Temperature MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain- to- Source Voltage Drain- to- Gate Voltage (RGS = 1.0 MΩ) Gate- to- Source Voltage - Continuous - Non- repetitive (tp ≤ 10 ms) Drain Current - Continuous @ 25°C Drain Current - Continuous @ 100°C Drain Current - Single Pulse (tp ≤ 10 µs) Total Power Dissipation @ 25°C Derate above 25°C Total Power Dissipation @ TA = 25°C (Note 2.) Operating and Storage Temperature Range Single Pulse Drain- to- Source Avalanche Energy - Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 5 Apk, L = 10 m H, RG = 25 Ω) Thermal Resistance - Junction to Case - Junction to Ambient (Note 1.) - Junction to Ambient (Note 2.) Maximum Lead Temperature for Soldering Purposes, 1/8″ from Case for 10 seconds Symbol VDSS VDGR VGS VGSM ID ID IDM PD Value 60 60 ± 15 ± 25 5 4 18 40 0.27 2.1 - 55 to 175 125 Unit Vdc Vdc S Vdc Vpk Adc Apk Watts W/°C Watts °C m J 1 2 3 DPAK CASE 369C Style 2 4 YWW 5P06V 2 1 3 Drain Gate Source 4 Drain 1 YWW 5P06V 1 2 3 Gate Drain Source Package DPAK DPAK Straight Lead DPAK Shipping 75 Units/Rail 75 Units/Rail 2500 Tape & Reel Publication Order Number: MTD5P06V/D 4 G http://onsemi. V(BR)DSS 60 V RDS(on) TYP 340 m W ID MAX 5.0 A P- Channel D MARKING DIAGRAMS 4 Drain TJ, Tstg EAS °C/W RθJC RθJA RθJA TL 3.75 100 71.4 260 °C 3 DPAK CASE 369D Style 2 5P06V Y WW Device Code = Year = Work Week 1. When surface mounted to an FR4 board using the minimum...