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NTD600N80S3Z - 800V 8A N-Channel Power MOSFET

General Description

performance MOSFET family offering 800 V breakdown voltage.

Key Features

  • Typ. RDS(on) = 550 mW.
  • Ultra Low Gate Charge (Typ. Qg = 15.5 nC).
  • Low Stored Energy in Output Capacitance (Eoss = 1.74 mJ @ 400 V).
  • 100% Avalanche Tested.
  • ESD Improved Capability with Zener Diode.
  • RoHS Compliant.

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Datasheet Details

Part number NTD600N80S3Z
Manufacturer onsemi
File Size 253.67 KB
Description 800V 8A N-Channel Power MOSFET
Datasheet download datasheet NTD600N80S3Z Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – Power, N-Channel, SUPERFET) III 800 V, 600 mW, 8 A NTD600N80S3Z Description 800 V SUPERFET III MOSFET is ON Semiconductor’s high performance MOSFET family offering 800 V breakdown voltage. New 800 V SUPERFET III MOSFET which is optimized for primary switch of flyback converter, enables lower switching losses and case temperature without sacrificing EMI performance thanks to its optimized design. In addition, internal Zener Diode significantly improves ESD capability. This new family of 800 V SUPERFET III MOSFET enables to make more efficient, compact, cooler and more robust applications because of its remarkable performance in switching power applications such as Laptop adapter, Audio, Lighting, ATX power and industrial power supplies. Features • Typ.