NTD600N80S3Z Overview
800 V SUPERFET III MOSFET is ON Semiconductor’s high performance MOSFET family offering 800 V breakdown voltage. New 800 V SUPERFET III MOSFET which is optimized for primary switch of flyback converter, enables lower switching losses and case temperature without sacrificing EMI performance thanks to its optimized design. In addition, internal Zener Diode significantly improves ESD capability.
NTD600N80S3Z Key Features
- Typ. RDS(on) = 550 mW
- Ultra Low Gate Charge (Typ. Qg = 15.5 nC)
- Low Stored Energy in Output Capacitance (Eoss = 1.74 mJ @ 400 V)
- 100% Avalanche Tested
- ESD Improved Capability with Zener Diode
- RoHS pliant