NTD600N80S3Z Overview
Key Specifications
Max Operating Temp: 150 °C
Min Operating Temp: -55 °C
Description
800 V SUPERFET III MOSFET is ON Semiconductor’s high performance MOSFET family offering 800 V breakdown voltage. New 800 V SUPERFET III MOSFET which is optimized for primary switch of flyback converter, enables lower switching losses and case temperature without sacrificing EMI performance thanks to its optimized design.
Key Features
- Typ. RDS(on) = 550 mW
- Ultra Low Gate Charge (Typ. Qg = 15.5 nC)
- Low Stored Energy in Output Capacitance (Eoss = 1.74 mJ @ 400 V)
- 100% Avalanche Tested
- ESD Improved Capability with Zener Diode
- RoHS Compliant
