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NTD70N03R
Power MOSFET
72 A, 25 V, N-Channel DPAK
Features
•ăPlanar HD3e Process for Fast Switching Performance •ăLow RDS(on) to Minimize Conduction Loss •ăLow CISS to Minimize Driver Loss •ăLow Gate Charge •ăPb-Free Packages are Available
MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified)
Parameter
Symbol Value Unit
Drain-to-Source Voltage
Gate-to-Source Voltage - Continuous
Thermal Resistance - Junction-to-Case Total Power Dissipation @ TC = 25°C Drain Current - Continuous @ TC = 25°C, Chip - Continuous @ TC = 25°C, Limited by Package - Continuous @ TA = 25°C, Limited by Wires - Single Pulse (tp = 10 ms)
Thermal Resistance - Junction-to-Ambient ą(Note1) Total Power Dissipation @ TA = 25°C Drain Current - Continuous @ TA = 25°C
Thermal Resistance - Junction-to-Ambient ą(Note2) T
NTD70N03R Datasheet
