Datasheet Summary
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NTGD3133P Power MOSFET
- 20 V,
- 2.5 A, P- Channel, TSOP- 6 Dual
Features
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- Reduced Gate Charge for Fast Switching
- 2.5 V Gate Rating Leading Edge Trench Technology for Low On Resistance Independent Devices to Provide Design Flexibility This is a Pb- Free Device http://onsemi.
V(BR)DSS
- 20 V RDS(on) MAX 145 mW @
- 4.5 V 200 mW @
- 2.5 V ID MAX
- 2.5 A
Applications
Li- Ion Battery Charging Load Switch / Power Switching DC to DC Conversion Portable Devices like PDA’s, Cellular Phones, and Hard Drives
S1 G1 G2
S2
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Drain- to- Source Voltage Gate- to- Source Voltage Continuous Drain Current (Note 1)...