Datasheet Summary
NTGD3147F Power MOSFET and Schottky Diode
Features
- 20 V,
- 2.5 A, P- Channel with Schottky Barrier Diode, TSOP- 6
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Fast Switching Low Gate Change Low RDS(on) Low VF Schottky Diode Independently Connected Devices to Provide Design Flexibility This is a Pb- Free Device http://onsemi. P- CHANNEL MOSFET
V(BR)DSS
- 20 V RDS(on) Max 145 mW @
- 4.5 V 200 mW @
- 2.5 V ID Max
- 2.2 A
- 1.6 A
SCHOTTKY DIODE
VR Max 20 V VF Max 0.45 V IF Max 1.0 A
Applications
- DC- DC Converters
- Portable Devices like PDA’s, Cellular Phones, and Hard Drives
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Drain- to- Source Voltage Gate- to- Source Voltage Continuous Drain Current (Note 1) Power...