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NTGD3147F - Power MOSFET and Schottky Diode

Features

  • 20 V,.
  • 2.5 A, P.
  • Channel with Schottky Barrier Diode, TSOP.
  • 6.
  • Fast Switching Low Gate Change Low RDS(on) Low VF Schottky Diode Independently Connected Devices to Provide Design Flexibility This is a Pb.
  • Free Device http://onsemi. com P.

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Datasheet Details

Part number NTGD3147F
Manufacturer onsemi
File Size 131.55 KB
Description Power MOSFET and Schottky Diode
Datasheet download datasheet NTGD3147F Datasheet
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NTGD3147F Power MOSFET and Schottky Diode Features −20 V, −2.5 A, P−Channel with Schottky Barrier Diode, TSOP−6 • • • • • • Fast Switching Low Gate Change Low RDS(on) Low VF Schottky Diode Independently Connected Devices to Provide Design Flexibility This is a Pb−Free Device http://onsemi.com P−CHANNEL MOSFET V(BR)DSS −20 V RDS(on) Max 145 mW @ −4.5 V 200 mW @ −2.5 V ID Max −2.2 A −1.6 A SCHOTTKY DIODE VR Max 20 V VF Max 0.45 V IF Max 1.
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