Datasheet Summary
NTGD4169F Power MOSFET and Schottky Diode
Features
30 V, 2.9 A, N- Channel with Schottky Barrier Diode, TSOP- 6
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Fast Switching Low Gate Change Low RDS(on) Low VF Schottky Diode Independently Connected Devices to Provide Design Flexibility This is a Pb- Free Device
.. http://onsemi. N- CHANNEL MOSFET
V(BR)DSS 30 V RDS(on) Max 90 mW @ 4.5 V 125 mW @ 2.5 V ID Max 2.6 A 2.2 A
SCHOTTKY DIODE
VR Max 30 V VF Max 0.53 V IF Max 1.0 A
Applications
- DC- DC Converters
- Portable Devices like PDA’s, Cellular Phones, and Hard Drives
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Drain- to- Source Voltage Gate- to- Source Voltage N- Channel Continuous Drain...