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NTH027N65S3F - N-Channel MOSFET

General Description

SUPERFET III MOSFET is onsemi’s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on

resistance and lower gate charge performance.

Key Features

  • 700 V @ TJ = 150°C.
  • Typ. RDS(on) = 23 mW.
  • Ultra Low Gate Charge (Typ. Qg = 259 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 1972 pF).
  • 100% Avalanche Tested.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET  – Power, N-Channel, SUPERFET III, FRFET 650 V, 75 A, 27.4 mW NTH027N65S3F Description SUPERFET III MOSFET is onsemi’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability. Features • 700 V @ TJ = 150°C • Typ. RDS(on) = 23 mW • Ultra Low Gate Charge (Typ.